1 of 2 features a a b c d maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified mechanical data do-35 dim min max a 25.40 b 4.00 c 0.60 d 2.00 all dimensions in mm 1n914/a/b repetitive peak forward current: max. 225 ma repetitive peak reverse voltage:max. 100 v continuous reverse voltage:max. 75 v high switching speed: max. 4 ns case: do-35 glass case weight: approx. 0.13g symbol value unit v rrm 100 v v rm 75 v maximum continuous forward current i f 75 ma maximum power dissipation p d 250 mw maximum repetitive peak forward current i frm 225 ma maximum non-repetitive peak forward current at t = 1s i fsm 0.5 a maximum junction temperature t j 175 c storage temperature range t s -65 to + 200 c parameter maximum repetitive peak reverse voltage maximum continuous reverse voltage parameter symbol min typ max unit v r = 20 v - - 25 na v r = 20 v , tj = 150 c --50 a 1n914 i f = 10 ma - - 1.0 v 1N914A i f = 20 ma - - 1.0 v 1n914b i f = 5 ma 0.62 - 0.72 v 1n914b i f = 100 ma - - 1.0 v diode capacitance cd - - 4.0 pf i f = 10 ma to i r = 60 ma r l = 100 ; measured at i r = 1ma reverse current ns 4 - - test condition f = 1mhz ; v r = 0 reverse recovery time trr i r forward voltage v f 75ma axial leaded high speed switching diodes
2 of 2 fig. 1 maximum permissible continuous fig. 2 typical forward voltage forward current as a function of ambient temperature. fig. 3 typical diode capacitance as fig. 4 typical reverese current a function of reverse voltage versus junction temperature 010 20 reverse voltage , v r (v) 0.4 0.5 1.2 diode capacitance , cd (pf) 0 0.4 1.2 forward voltage , v f (v) 0.01 10 1000 forward current , i f (ma) 0.1 1 100 0 0 100 200 ambient temperature , ta ( c) 25 75 1.4 0.6 0.7 0.8 1.0 continuous forward current, i f (ma) 50 100 0.8 f = 1mhz; t j = 25 c lead length 10mm. t j = 25 c 0 100 200 1 10 2 10 3 10 -2 junction temperature , ta ( c) reverse current , i r ( a) v r = 75v 10 10 -1 0.9
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